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| Advance Product Information January 12, 2004 Ku-Band VSAT Packaged Amplifier * * * * * * * Top View Bottom View TGA2508-EPU-SM Key Features Typical Frequency Range: 12 - 19 GHz 25 dB Nominal Gain 29 dBm Nominal P1dB Bias Conditions: 7 V, 433 mA PHEMT Technology Low cost true surface mount package Package Dimensions: 4.0 x 4.0 x 0.9 mm (0.157 x 0.157 x 0.035 in) Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 30 20 S-Parameter (dB) 10 0 -10 -20 -30 -40 10 11 12 13 14 15 Primary Applications * * VSAT Ground Terminals Point to Point Radio Military Ku Band Ku-Band Space GAIN ORL * * IRL 16 17 18 19 20 Frequency (GHz) 35 30 P1dB (dBm) 25 20 15 10 12 13 14 15 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Package Operating Temperature VALUE 8V -2 to 0 V 591 mA 16 mA 17 dBm 4.7 W 150 C 250 C -65 to 150 C -40 to 110 C 0 0 0 0 NOTES 4/ V I + 4/ | IG | PIN PD T CH TM TSTG T CASE 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 C, the median life is 4.3E+6 hrs. 0 3/ 4/ 5/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) PARAMETER Frequency Range Drain Operating Quiescent Current Small Signal Gain Input Return Loss (Linear Small Signal) Output Return Loss (Linear Small Signal Output Power @ 1 dB Compression Gain TYPICAL 12 - 19 7 433 25 15 7 29 UNITS GHz V mA dB dB dB dBm TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 7 V ID = 433 mA Pdiss = 3.031 W TCH O ( C) RTJC (qC/W) TM (HRS) RJC Thermal Resistance (Channel to Case) 111 13.5 3.8 E+7 Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case O Temperature @ 70 C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Preliminary Measured Data Bias Conditions: Vd = 5 - 7 V, Id = 433 mA 32 30 28 26 24 Gain (dB) 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 5V 6V 7V 32 31 30 29 P1dB (dBm) 28 27 26 25 24 23 22 12 13 14 15 16 17 18 19 Frequency (GHz) 7V 6V 5V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Preliminary Measured Data Bias Conditions: Vd = 5 - 7 V, Id = 433 mA 0 -5 -10 Input Return Loss (dB) -15 6V 5V -20 -25 -30 -35 -40 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 0 -5 -10 7V 7V 6V Output Return Loss (dB) -15 -20 -25 -30 5V -35 -40 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Preliminary Measured Data Bias Conditions: Vd = 5 - 7 V, Id = 433 mA 32 31 7V 30 29 Psat (dBm) 28 27 26 25 24 23 22 12 13 14 15 16 17 18 19 Frequency (GHz) 6V 5V 32 30 28 26 24 Pout (dBm) 22 20 18 16 14 12 10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) 1.4 Frequency @ 14 GHz Vd=5V Vd=6V Vd=7V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Current (A) 6 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Package Layout Top View Bottom View GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Package Pinout Diagram 10 11 12 9 TGA 2508-SM 1 8 13 2 7 3 6 5 4 Top Side Dot indicates Pin 1 Bottom Side Pin 1 2 3 4 5-7 8 9 10 11, 12 13 Description NC RF Input NC Vg NC RF Output NC Vd NC GND Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Mechanical Drawing (Bottom Side) 10 11 12 9 13 8 2.41 x 2.41mm Die Attach Pad 1 2 7 3 6 5 4 Thickness Units: Millimeters Package tolerance: +/- 0.10 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 12, 2004 TGA2508-EPU-SM Recommended Board Layout Assembly Vd 1uF 100PF RFin RFout 100PF 1uF Vg All measurement was made with part solder to 0.008 in thick of RO4003 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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